PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA

被引：52

作者：

GOURRIER, S

SMIT, L

FRIEDEL, P

LARSEN, PK

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1063/1.332578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3993 / 3997

页数：5

共 14 条

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[3] INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES
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[4] FRIEDEL P, 1982, THESIS U PARIS 11 OR
[5] FRIEDEL P, UNPUB
[6] GOURRIER S, 1981, PLASMA CHEM PLASMA P, V1, P217
[7] LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222
[8] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE
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[9] ANGLE-RESOLVED PHOTOEMISSION FROM AS-STABLE GAAS (001) SURFACES PREPARED BY MBE
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JOYCE, BA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (02): : 167 - 192
[10] DESIGN AND PERFORMANCE OF A TOROIDAL GRAZING-INCIDENCE MONOCHROMATOR FOR THE 20-200 EV PHOTON ENERGY-RANGE
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EDERER, D
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