INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES

被引：43

作者：

FRIEDEL, P

GOURRIER, S

机构：

来源：

关键词：

D O I：

10.1063/1.93985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：509 / 511

页数：3

共 6 条

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[2] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES
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CHANG, CC
DARACK, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50
[3] FRIEDEL P, 1982, THESIS ORSAY
[4] GROWTH OF DIELECTRIC FILMS ON SEMICONDUCTORS AND METALS USING A MULTIPOLE PLASMA
GOURRIER, S
FRIEDEL, P
DIMITRIOU, P
THEETEN, JB
[J]. THIN SOLID FILMS, 1981, 84 (04) : 379 - 388
[5] GOURRIER S, 1982, INT C SEMICONDUCTORS
[6] EFFECT OF NATIVE OXIDE ON INTERFACE PROPERTY OF GAAS MIS STRUCTURES
SUZUKI, N
HARIU, T
SHIBATA, Y
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 761 - 762