Electrical conductivity mechanisms in porous silicon

被引:26
作者
Aroutiounian, VM [1 ]
Ghulinyan, MZ [1 ]
机构
[1] Yerevan State Univ, Dept Phys Semicond & Insulators, Yerevan 375025, Armenia
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 197卷 / 02期
关键词
D O I
10.1002/pssa.200306545
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present paper the peculiarities of conductivity of porous silicon are studied. For the first time an attempt is made to describe analytically the dependence of porous silicon conductivity on material porosity. It is found that the conductivity is mainly crystalline for porosities much lower than the percolation threshold at 57%, while a fractal behavior is observed at porosities near percolation threshold. For higher values of porosities, the conductivity turns smoothly into a quasi-one-dimensional hopping. The reduction of the electrical current flow channels dimension from 3 to I for lower temperatures, described by the Mott law for amorphous semiconductors, occurs in porous silicon with increasing porosity.
引用
收藏
页码:462 / 466
页数:5
相关论文
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