Properties of ferroelectric BaMgF4 on Si(100), (110) and (111) substrates obtained by post-deposition rapid thermal annealing

被引：6

作者：

Kim, KH ^{[1
]}

Kim, JD ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

orientation dependence; ferroelectric BaMgF4; rapid thermal annealing; interface state density; polarization; UHV; MFSFETs;

D O I：

10.1143/JJAP.35.1557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Substrate orientation dependence of metal-ferroelectric BaMgF4-silicon capacitors obtained by post-deposition rapid thermal annealing was investigated. Fluoride films were deposited on Si(100)-, (110)- and (111)-oriented wafers in an ultrahigh-vacuum system at a substrate temperature of 300 degrees C. Post-deposition annealing was conducted for 10 s at 600 degrees C. The resistivity of the ferroelectric BaMgF4 film increased from a typical value of 1-2 x 10(11) Ohm . cm before annealing to about 5 x 10(13) Ohm . cm at 1 MV/cm, and the interface state density of the BaMgF4/Si interface decreased to 5-8 x 0(10)/cm(2) . eV. Apparent remanent polarizations of BaMgF4 films on (100)- and (111)-oriented silicon wafers were about 0.5-0.6 mu C/cm(2) and that of film on the (110) wafer was about 1.2 mu C/cm(2).

引用

页码：1557 / 1559

页数：3

共 9 条

[1] ELECTRICAL-PROPERTIES OF FERROELECTRIC BAMGF4 FILMS ON SI SUBSTRATES [J].

AIZAWA, K ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5178-5181

[2]

Garrido B., 1993, PHYSICS CHEM SIO2 SI, V2, P215, DOI [10.1007/978-1-4899-1588-7_23, DOI 10.1007/978-1-4899-1588-7_23]

[3] PROPOSAL OF ADAPTIVE-LEARNING NEURON CIRCUITS WITH FERROELECTRIC ANALOG-MEMORY WEIGHTS [J].

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B) :442-446

[4] IMPROVEMENT OF THE ELECTRICAL-PROPERTIES OF METAL-FERROELECTRIC BAMGF4-SILICON CAPACITOR BY RAPID THERMAL ANNEALING [J].

KIM, KH ;

KIM, JD ;

ISHIWARA, H .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3143-3145

[5] GROWTH AND THE MICROSTRUCTURAL AND FERROELECTRIC CHARACTERIZATION OF ORIENTED BAMGF4 THIN-FILMS [J].

SINHAROY, S ;

BUHAY, H ;

BURKE, MG ;

LAMPE, DR ;

POLLAK, TM .

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1991, 38 (06) :663-671

[6] GROWTH AND CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS [J].

SINHAROY, S ;

BUHAY, H ;

FRANCOMBE, MH ;

TAKEI, WJ ;

DOYLE, NJ ;

RIEGER, JH ;

LAMPE, DR ;

STEPKE, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :409-413

[7] EPITAXIAL ALL-PEROVSKITE FERROELECTRIC FIELD-EFFECT TRANSISTOR WITH A MEMORY RETENTION [J].

WATANABE, Y .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1770-1772

[8]

Werner K, 1970, RCA REV, V31, P187

[9]

WU SY, 1974, IEEE T ELECTRON DEV, VED21, P499

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