Si and SiGe millimeter-wave integrated circuits

Monolithic integrated millimeter-wave circuits based on silicon anal SiGe are emerging as an attractive option in the field of millimeter-crave communications and millimeter-wave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-arl silicon-and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon- and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.