Optical disk recording using a GaN blue-violet laser diode

被引:111
作者
Ichimura, I [1 ]
Maeda, F [1 ]
Osato, K [1 ]
Yamamoto, K [1 ]
Kasami, Y [1 ]
机构
[1] Sony Corp, Home Network Co, Dev Ctr, Shinagawa Ku, Tokyo 1410001, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 2B期
关键词
GaN laser diode; two-element lens; high numerical aperture (NA); wide-band actuator; phase-change disk; high-density recording; high data transfer rate;
D O I
10.1143/JJAP.39.937
中图分类号
O59 [应用物理学];
学科分类号
摘要
The combination of a GaN laser diode and a 0.85 numerical aperture objective has achieved an optical storage capacity of over 22 GB. Owing to sufficient modulation ability and low-noise characteristics, GaN semiconductor lasers possess adequate quality to be light sources in optical recording systems. A bit size of 130 nm x 300 nm, corresponding to the areal recording density of 16.5 Gbit/in.(2), was realized on a six-layered thin-cover phase-change disk with a crystallization-promoting structure. Each active layer was inversely stacked and was thermally as well as optically optimized for the blue-violet light sources. A new small electromagnetic actuator with a lightweight phi 3 mm two-element lens has extended its servo-bandwidth up to 8 kHz and enabled precise focusing control at the data transfer rate of 35 Mbps.
引用
收藏
页码:937 / 942
页数:6
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