Critical parameters for electrical tree formation in XLPE

被引：27

作者：

Jiang, G ^{[1
]}

Kuang, JB

Boggs, S

机构：

[1] Univ Connecticut, Inst Mat Sci, Elect Insulat Res Ctr, Storrs, CT 06269 USA

[2] Univ Toronto, Dept Elect Engn, Toronto, ON M5S 1A4, Canada

来源：

IEEE TRANSACTIONS ON POWER DELIVERY | 1998年 / 13卷 / 02期

关键词：

D O I：

10.1109/61.660892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Published data for electrical tree inception field at a defect in XLPE vs. the Laplacian field at the tip of the defect are explained on the basis of a minimum distance which the space charged limited field must extend from the defect tip into the XLPE in order to damage enough dielectric in the field direction to facilitate PD inception and tree initiation.

引用

页码：292 / 296

页数：5

共 7 条

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[4] HIBMA T, 1985, IEEE PUBLICATION, P266
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