Galvanostatic deposition and characterization of cuprous oxide thin films

Electrochemical deposition of cuprous oxide (Cu2O) thin films on tin-oxide-coated glass and copper substrates by cathodic reduction of alkaline cupric lactate solution has been investigated between 60 and 80 degrees C. Deposition kinetics of cuprous oxide thin films were studied and the parameters limit for the deposition of the films were determined. Structure of the deposited film is simple cubic with a preferential orientation of (2 0 0). Optical absorption studies reveal 1.99 eV for band gap and optical constants (n, k) are evaluated. Electrical resistivity studies are carried out in the temperature range 27-330 degrees C. The effect of annealing on the resistivity of Cu2O films are also studied and the results are discussed. (C) 2000 Elsevier Science B.V. AU rights reserved.