ELECTRICAL CHARACTERISTICS OF CU-CU2O DIODES FABRICATED BY ANODIC-OXIDATION

被引:11
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IKATA, ES
ADJEPONG, SK
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10.1088/0022-3727/21/10/009
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O59 [应用物理学];
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页码:1516 / 1518
页数:3
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共 15 条
[1]   PHOTOVOLTAIC PROPERTIES AND BARRIER HEIGHTS OF SINGLE-CRYSTAL AND POLYCRYSTALLINE CU2O-CU CONTACTS [J].
ASSIMOS, JA ;
TRIVICH, D .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1687-1693
[2]   PHOTO-VOLTAIC EFFECT IN CUPROUS-OXIDE COPPER JUNCTIONS IN RELATION TO THE OPTICAL-ABSORPTION SPECTRUM OF CUPROUS-OXIDE [J].
BEREZIN, AA ;
WEICHMAN, FL .
SOLID STATE COMMUNICATIONS, 1981, 37 (02) :157-160
[3]   CHARACTERISTICS OF METAL-SEMICONDUCTOR CONTACTS FABRICATED BY THE ELECTROLESS DEPOSITION METHOD [J].
DATTA, AK ;
GHOSH, K ;
CHOWDHURY, NKD ;
DAW, AN .
SOLID-STATE ELECTRONICS, 1980, 23 (08) :905-907
[4]   PHOTO-VOLTAIC EFFECTS IN CU2O-CU SOLAR-CELLS GROWN BY ANODIC-OXIDATION [J].
FORTIN, E ;
MASSON, D .
SOLID-STATE ELECTRONICS, 1982, 25 (04) :281-283
[5]   THIN-FILM CU2O-CU PHOTO-VOLTAIC CELLS [J].
FORTIN, E ;
SEARS, WM .
CANADIAN JOURNAL OF PHYSICS, 1982, 60 (06) :901-908
[6]   MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].
GREEN, MA ;
KING, FD ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561
[7]   LARGE BARRIER TUNNEL METAL-INSULATOR - SEMICONDUCTOR STRUCTURES [J].
HANSELAER, PL ;
VANMEIRHAEGHE, RL ;
LAFLERE, WH ;
CARDON, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (02) :94-101
[8]  
HATTORI K, 1982, J APPL PHYS, V53, P6909
[9]   EVIDENCE OF TUNNEL-ASSISTED TRANSPORT IN NONDEGENERATE MOS AND SEMICONDUCTOR-OXIDE-SEMICONDUCTOR DIODES AT ROOM-TEMPERATURE [J].
KAR, S ;
ASHOK, S ;
FONASH, SJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3417-3421
[10]  
OSLEN LC, 1979, APPL PHYS LETT, V34, P47