CHARACTERISTICS OF METAL-SEMICONDUCTOR CONTACTS FABRICATED BY THE ELECTROLESS DEPOSITION METHOD

被引：11

作者：

DATTA, AK

GHOSH, K

CHOWDHURY, NKD

DAW, AN

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 08期

关键词：

D O I：

10.1016/0038-1101(80)90108-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：905 / 907

页数：3

共 8 条

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[5]

RHODERICK EH, 1974, P C SER MANCHESTER, P1

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[7] EXCESS CAPACITANCE AND NON-IDEAL SCHOTTKY BARRIERS ON GAAS [J].

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[8]

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