Indium oxide as a possible tunnel barrier in spintronic devices

被引：15

作者：

Androulakis, J

Gardelis, S

Giapintzakis, J

Gagaoudakis, E

Kiriakidis, G

机构：

[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Greece

[2] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece

[3] Univ Crete, Dept Phys, Iraklion 71003, Crete, Greece

来源：

THIN SOLID FILMS | 2005年 / 471卷 / 1-2期

关键词：

magnetic structures; indium oxide; tunneling; magnetic tunnel junction;

D O I：

10.1016/j.tsf.2004.06.162

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the growth of ultra-thin indium oxide layers using the dc-magnetron sputtering method. We demonstrate that good quality tunnel barriers made of indium oxide can be routinely fabricated and employed in spintronic-related devices. Simple magnetic tunnel junctions (MTJs) were fabricated in a cross geometry using ex situ thermally evaporated cobalt and permalloy. Our best junctions obey the Rowell criteria for tunneling and exhibit a tunnel magnetoresistance of 15% at 100 K. (C) 2004 Elsevier B.V. All rights reserved.

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收藏

页码：293 / 297

页数：5

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