MSLS, a least-squares procedure for accurate crystal structure refinement from dynamical electron diffraction patterns

被引:134
作者
Jansen, J
Tang, D
Zandbergen, HW
Schenk, H
机构
[1] Delft Univ Technol, Mat Sci Lab, Natl Ctr HREM, NL-2628 AL Delft, Netherlands
[2] Univ Amsterdam, Crystallog Lab, NL-1018 WV Amsterdam, Netherlands
来源
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 1998年 / 54卷
关键词
D O I
10.1107/S0108767397010489
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In X-ray crystallography, a least-squares structure refinement is used to two purposes: to prove the correctness of the proposed model and to improve it. In electron crystallography, the same tool would be desirable. However, the standard programs for least-squares structure refinement used in X-ray diffraction may give wrong results using electron diffraction data because the. kinematically calculated diffracted intensity is not valid for the interaction of electrons and crystals thicker than about 20 Angstrom for strong scatterers. In this paper, a new approach is presented that overcomes this problem and in addition takes into account all the advantages contained in dynamic scattering. The multislice method, well known in high-resolution electron microscopy (HREM), was combined with a least-squares algorithm, resulting in the multislice least-squares (MSLS) procedure. Experiments show that the atomic positions obtained by the new procedure are of the same accuracy as those obtained from single-crystal X-ray diffraction. However, the size of the single crystals used is much smaller (diameters down to +/-100 Angstrom). Also, light-atom positions can be determined with high precision by using data sets from crystal areas with different thicknesses. The multislice refinement gave good results up to 150 to 400 Angstrom depending on the composition of the crystal, with R values based on the intensities of less than 5%. An additional advantage of the approach is that some extra quantities (e.g. crystal thickness, crystal orientation) can be refined at the same time.
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收藏
页码:91 / 101
页数:11
相关论文
共 30 条
[1]   ABSORPTIVE FORM-FACTORS FOR HIGH-ENERGY ELECTRON-DIFFRACTION [J].
BIRD, DM ;
KING, QA .
ACTA CRYSTALLOGRAPHICA SECTION A, 1990, 46 :202-208
[2]  
CAVA RJ, 1997, IN PRESS J SOLID STA
[3]   PHASE RETRIEVAL THROUGH FOCUS VARIATION FOR ULTRA-RESOLUTION IN FIELD-EMISSION TRANSMISSION ELECTRON-MICROSCOPY [J].
COENE, W ;
JANSSEN, G ;
DEBEECK, MO ;
VANDYCK, D .
PHYSICAL REVIEW LETTERS, 1992, 69 (26) :3743-3746
[4]   THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J].
COWLEY, JM ;
MOODIE, AF .
ACTA CRYSTALLOGRAPHICA, 1957, 10 (10) :609-619
[5]   X-RAY SCATTERING FACTORS COMPUTED FROM NUMERICAL HARTREE-FOCK WAVE FUNCTIONS [J].
CROMER, DT ;
MANN, JB .
ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :321-&
[6]  
DEBEECK MO, 1997, IN PRESS ULTRAMICROS
[7]   THE SAYRE EQUATION IN ELECTRON CRYSTALLOGRAPHY [J].
DORSET, DL ;
KOPP, S ;
FRYER, JR ;
TIVOL, WF .
ULTRAMICROSCOPY, 1995, 57 (01) :59-89
[8]   RELATIVISTIC HARTREE-FOCK X-RAY AND ELECTRON SCATTERING FACTORS [J].
DOYLE, PA ;
TURNER, PS .
ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :390-&
[9]  
GIACOVAZZO C, 1992, FUNDAMENTALS CRYSTAL, P90
[10]   CRISP - CRYSTALLOGRAPHIC IMAGE-PROCESSING ON A PERSONAL-COMPUTER [J].
HOVMOLLER, S .
ULTRAMICROSCOPY, 1992, 41 (1-3) :121-135