Effect of interacting resonances on dielectronic recombination in static fields

被引:21
作者
Robicheaux, F [1 ]
Pindzola, MS
Griffin, DC
机构
[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[2] Rollins Coll, Dept Phys, Winter Pk, FL 32789 USA
关键词
D O I
10.1103/PhysRevLett.80.1402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We find that the static field enhancement of dielectronic recombination may be strongly reduced by the interaction between resonances through common continue. The interaction effect is not limited to a few resonances but extends over whole n manifolds, thus it can significantly reduce the field enhancement of the total recombination rate. The standard lowest order theory is recast using a complex Hamiltonian to include higher order tenus usually identified with interaction through common continua. We present calculations for C3+ and Si11+ using both time independent and time dependent configuration average methods.
引用
收藏
页码:1402 / 1405
页数:4
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