共 21 条
Effect of interacting resonances on dielectronic recombination in static fields
被引:21
作者:
Robicheaux, F
[1
]
Pindzola, MS
Griffin, DC
机构:
[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[2] Rollins Coll, Dept Phys, Winter Pk, FL 32789 USA
关键词:
D O I:
10.1103/PhysRevLett.80.1402
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We find that the static field enhancement of dielectronic recombination may be strongly reduced by the interaction between resonances through common continue. The interaction effect is not limited to a few resonances but extends over whole n manifolds, thus it can significantly reduce the field enhancement of the total recombination rate. The standard lowest order theory is recast using a complex Hamiltonian to include higher order tenus usually identified with interaction through common continua. We present calculations for C3+ and Si11+ using both time independent and time dependent configuration average methods.
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页码:1402 / 1405
页数:4
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