Mussel-Inspired Polydopamine Coating for Flexible Ternary Resistive Memory

被引:17
作者
Zhao, Yong-Yan [1 ]
Cheng, Xue-Feng [1 ]
Qian, Wen Hu [1 ]
Zhou, Jin [1 ]
Sun, Wu-Ji [1 ]
Hou, Xiang [1 ]
He, Jing-Hui [1 ]
Li, Hua [1 ]
Xu, Qing-Feng [1 ]
Li, Na-Jun [1 ]
Chen, Dong-Yun [1 ]
Lu, Jian-Mei [1 ]
机构
[1] Soochow Univ, Coll Chem Chem Engn & Mat Sci, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Natl United Engn Lab Functionalized Environm Adso, Suzhou 215123, Peoples R China
关键词
flexible electronics; mussel-inspired; polydopamine; resistive random access memory; ternary memory; ELECTRONIC MEMORY; DOPAMINE; PERFORMANCE; DEVICES; SURFACE; CHAIN; MOLECULE; PLATFORM; BINDING; TIMES;
D O I
10.1002/asia.201800634
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
In recent years, numerous organic molecules and polymers carrying various functional groups were synthesized and used in fabrication of wearable electronic devices. Compared to previous materials that suffer from poisonousness, stiffness and complex film fabrication, we circumvent above matters by taking advantage of mussel-inspired polydopamine as our active material to realize resistive random access memories (RRAMs). Polydopamine thin films were grown on indium tin oxide glass catalyzed by Cu2SO4/H2O2 and characterized by Fourier infrared spectroscopy (FT-IR), UV/Vis spectroscopy and scanning electron microscopy. The Al/Polydopamine film/ITO devices possess ternary memory behavior with good ternary device yield with two threshold voltages around 1.50V and 3.50V, long data retention over 10(4)s of continuous reading or 10(4) pulse reading. The two resistance switchings are attributed to defects functioning as charge traps and the formation of conductive filaments. A flexible device based on Al/polydopamine film/ITO/polyethylene terephthalate retains its ternary memory behavior after being bent with a bending radius of 1.54cm and bending cycles up to 5000, demonstrating good compatibility and flexibility of polydopamine.
引用
收藏
页码:1744 / 1750
页数:7
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