Low temperature LPE growth of YBa2Cu3O6+x thick film on silver substrate using silver saturated Ba-Cu-O-F flux

被引：23

作者：

Niiori, Y ^{[1
]}

Yamada, Y ^{[1
]}

Hirabayashi, I ^{[1
]}

机构：

[1] Int Superconduct Technol Ctr, Superconduct Res Lab, Atsuta Ku, Nagoya, Aichi 456, Japan

来源：

PHYSICA C | 1998年 / 296卷 / 1-2期

关键词：

YBa2Cu3O6+x; liquid phase epitaxy; silver; pulsed lasts deposition; thick film;

D O I：

10.1016/S0921-4534(97)01809-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have prepared thick YBa2Cu3O6+x film on silver substrate by the liquid phase epitaxial (LPE) method using silver saturated Ba-Cu-O-F flux. As the silver content in the flux increased, the temperature for the primary phase region of Y123 decreased down to near 900 degrees C. Dissolution of silver substrate was restrained by silver saturated Ba-Cu-O-F flux and the LPE-grown Y123 film on Ag(110) single crystalline substrate was highly c-axis oriented and showed superconducting transition at 91 K. (C) 1998 Elsevier Science B.V.

引用

页码：65 / 68

页数：4

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