SiC-based Schottky diode gas sensors

被引：10

作者：

Hunter, GW ^{[1
]}

Neudeck, PG

Chen, LY

Knight, D

Liu, CC

Wu, QH

机构：

[1] NASA, Lewis Res Ctr, Cleveland, OH 44135 USA

[2] NASA, Cortez Lewis Res Ctr, Cleveland, OH 44135 USA

[3] Case Western Reserve Univ, Ctr Elect Design, Cleveland, OH 44106 USA

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

SiC; gas; emission; sensor; high temperature;

D O I：

10.4028/www.scientific.net/MSF.264-268.1093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide based Schottky diode gas sensors are being developed for high temperature: applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SIC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor array for versatile high temperature gas sensing applications.

引用

页码：1093 / 1096

页数：4

共 6 条

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