CuInSe2 precursor films electro-deposited directly onto MoSe2

被引:7
作者
Cummings, Charles Y. [1 ]
Zoppi, Guillaume [2 ]
Forbes, Ian [2 ]
Dale, Phillip J. [3 ]
Scragg, Jonathan J. [1 ]
Peter, Laurie M. [1 ]
Kociok-Koehn, Gabriele [1 ]
Marken, Frank [1 ]
机构
[1] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England
[2] Northumbria Univ, Northumbria Photovolta Applicat Ctr, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England
[3] Univ Luxembourg, Lab Photovolta, L-1511 Luxembourg, Luxembourg
基金
英国工程与自然科学研究理事会;
关键词
Copper indium diselenide; Solar cells; Molybdenum; Electro-deposition; MoSe2; Molybdenum diselenide; IN-SITU; ELECTRODEPOSITION; SELENIZATION; TEMPERATURE; INDIUM; LAYERS;
D O I
10.1016/j.jelechem.2010.03.031
中图分类号
O65 [分析化学];
学科分类号
070302 [分析化学];
摘要
Mo/MoSe2 thin film electrodes formed by selenisation of molybdenum are investigated as chemically robust substrates for the electro-deposition of InCu precursor layers for CuInSe2 (CISe) solar cell absorber films. Exposure of molybdenum films to selenium vapour at 550 degrees C produces thin and chemically robust heterostructures of Mo/MoSe2. These films exhibit the characteristics of a degenerate semi-conductor and provide close to metallic electrical conductivity for electro-deposition processes in both acidic and alkaline aqueous media. The Mo/MoSe2 films are characterised by cyclic voltammetry for the reduction of Ru(NH3)(6)(3) in aqueous 0.1 M KCl, for the reduction of 0.1 M In3+ in aqueous 0.5 M LiCl pH 3, and for the reduction of 0.1 M Cu2+ in aqueous 3 M NaOH with 0.2 M n-sorbitol. In all three cases well-defined and reversible voltammetric responses are observed. For the formation of CISe films initially In3+ is deposited potentiostatically followed by electro-deposition of Cu2+ and selenisation at 550 degrees C in selenium vapour. Mechanically stable CISe films are produced and preliminary photo-electrochemical data demonstrate the effects of changing the stoichiometry. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:16 / 21
页数:6
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