A comparison of the performance and reliability of wet-etched and dry-etched α-Si:H TFT's

被引：7

作者：

GadelRab, SM ^{[1
]}

Miri, AM ^{[1
]}

Chamberlain, SG ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

amorphous silicon; etching methods; TFT's;

D O I：

10.1109/16.658694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we compare the performance of wet-etched and dry-etched a-Si:H TFT's. We find that wet-etching of the a-Si:H layer increases the TFT mobility and reduces the threshold voltage. Furthermore, wet-etched TFT's display improved reliability characteristics En response to gate-bias stress, Our experiments indicate that there exists residual plasma-induced damage in dry-etched TFT's, even after a long-post-etching annealing step.

引用

页码：560 / 563

页数：4

共 12 条

[1]

FRENCH ID, 1994, MATER RES SOC SYMP P, V336, P769, DOI 10.1557/PROC-336-769

[2]

GADELRAB SM, UNPUB EFFECT ALKALI

[3]

GADELRAB SM, UNPUB IMPROVING RELI

[4] PERFORMANCE OF THIN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

KANICKI, J ;

LIBSCH, FR ;

GRIFFITH, J ;

POLASTRE, R .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2339-2345

[5] REACTIVE ION ETCH DAMAGES IN INVERTED, TRILAYER THIN-FILM TRANSISTOR [J].

KUO, Y .

APPLIED PHYSICS LETTERS, 1992, 61 (23) :2790-2792

[6] THIN-FILM TRANSISTORS WITH GRADED SINX GATE DIELECTRICS [J].

KUO, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (04) :1061-1065

[7]

MIRI AM, 1995, MATER RES SOC S P, V377, P737

[8]

NATAKA J, 1995, MATER RES SOC S P, V377, P173

[9] DEFECT POOL IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

VANBERKEL, C ;

FRANKLIN, AR ;

DEANE, SC ;

MILNE, WI .

PHYSICAL REVIEW B, 1992, 45 (08) :4160-4170

[10]

Runyan W.R., 1990, Semiconductor Integrated Circuit Processing Technology

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