High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

被引：24

作者：

Looi, HJ ^{[1
]}

Pang, LYS ^{[1
]}

Wang, Y ^{[1
]}

Whitfield, MD ^{[1
]}

Jackman, RB ^{[1
]}

机构：

[1] UCL, London WC1E 7JE, England

来源：

关键词：

metal-semiconductor; field effect; transistor; polycrystalline; diamond;

D O I：

10.1016/S0925-9635(97)00273-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline CVD diamond films with a near-surface hydrogenated layer have been used to form the first normally off enhancement mode MESFET structures from this material. A room temperature transconductance of 0.14 mS mm(-1) has been measured, the highest yet reported for a transistor structure made from polycrystalline material. The devices fully turn off, display current saturation and have a low gate leakage. Aluminium forms a near-ideal Schottky barrier on this material (SBH similar to 0.98 eV, ideality 1.1) and was used as the gate metallisation within the MESFET. Optimised forms of these structures would appear to offer a commercially viable route to high-performance, diamond-based electronic circuits. (C) 1998 Elsevier Science S.A.

引用

页码：565 / 568

页数：4

共 17 条

[1]

AOKI M, 1994, JPN J APPL PHYS, V33, P768

[2] NATURE OF ACCEPTOR CENTRE IN SEMICONDUCTING DIAMOND [J].