Electrical properties of a Schottky barrier formed on a homoepitaxially grown diamond(001) film

被引：26

作者：

Kiyota, H

Okushi, H

Ando, T

Kamo, M

Sato, Y

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

关键词：

semiconducting diamond; Schottky barrier; space charge density; gap states;

D O I：

10.1016/0925-9635(95)00372-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of Schottky barriers formed on homoepitaxially grown diamond (001) films has been studied by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. From the I-V characteristics, it is found that the Schottky-barrier height of the as-grown film depends strongly on the work function or the electronegativity of the metal while that of the oxidized film is almost independent of the metal. This result implies that the mechanisms of the barrier formation on the as-grown surface are drastically changed by oxidation. A difference between the electrical properties of the as-grown film and those of the oxidized film is also observed from C-V measurements. The high density of space charge due to ionized gap states is found in the vicinity of the as-grown diamond film and disappears after oxidation. These results suggest the presence of new acceptor centers, which are not related to boron, in the hydrogenated diamond.

引用

页码：718 / 722

页数：5

共 19 条

[1] HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPIC STUDY OF EPITAXIALLY GROWN DIAMOND (111) AND (100) SURFACES [J].