Landau level formation in semiconductor quantum dots in a high magnetic field

被引：14

作者：

Nomura, S

Samuelson, L

Pistol, ME

Uchida, K

Miura, N

Sugano, T

Aoyagi, Y

机构：

[1] LUND UNIV,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

[2] LUND UNIV,NANOMETER STRUCT CONSORTIUM,S-22100 LUND,SWEDEN

[3] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Landau level formations have been observed in the photoluminescence spectra of highly optically populated InP strained self-organized quantum dots in between barriers of In0.5Ga0.5P at a high magnetic field. The results clearly show the evolution of the discrete states caused by 3D confinement at 0 T into Landau level-like structures at 40.9 T. (C) 1997 American Institute of Physics.

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页码：2316 / 2318

页数：3

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