Analysis of generic spiral-coil RF transformers on silicon

被引：4

作者：

Ng, KT ^{[1
]}

Rejaei, B ^{[1
]}

de Kruijff, TR ^{[1
]}

Soyuer, M ^{[1
]}

Burghartz, JN ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, ECTM, Microwave Component Grp,Lab Elect Components Tech, NL-2628 CT Delft, Netherlands

来源：

2000 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2000年

关键词：

D O I：

10.1109/SMIC.2000.844309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates the effect of substrate loss, efficiency, and frequency response of the three generic spiral-coil transformers: stacked, bifilar and nested. The dependence of loss on the spacing of transformer coils from the oxide-silicon interface is confirmed experimentally. The high gains and better-than-expected bandwidths of the stacked transformers as compared to those of the bifilar and nested transformers are demonstrated. The effect of bulk silicon on transformer efficiency is investigated with the use of a substrate transfer technique.

引用

页码：103 / 107

页数：5

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