Progress in RF inductors on silicon - Understanding substrate losses

被引：54

作者：

Burghartz, JN ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Hts, NY 10598 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746412

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recent progress in the integration of inductors on silicon substrates is reviewed first. The substrate losses, which present the main difference to the well-established inductor integration on quasi-ideal GaAs or printed circuit boards, are then investigated through specific experiments to support the inductor optimization and modeling. Metal ground shield structures, that potentially isolate the spiral inductor coil from the lossy silicon, are evaluated as well.

引用

页码：523 / 526

页数：4

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