Evolution of the band structure of β-In2S3-3xO3x buffer layer with its oxygen content

被引:52
作者
Barreau, N [1 ]
Marsillac, S [1 ]
Bernède, JC [1 ]
Assmann, L [1 ]
机构
[1] Univ Nantes, LPSE, Fac Sci & Tech, F-44322 Nantes 3, France
关键词
D O I
10.1063/1.1565823
中图分类号
O59 [应用物理学];
学科分类号
摘要
The evolution of the band structure of beta-In2S3-3xO3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity chi of the BISO thin films shows that it decreases linearly from 4.65 to 3.85 eV when x varies from 0 to 0.14. This will facilitate fabrication of efficient Cu(InGa)Se-2-based solar cells having different absorber layer band gap. (C) 2003 American Institute of Physics.
引用
收藏
页码:5456 / 5459
页数:4
相关论文
共 18 条
  • [1] Study of low temperature elaborated tailored optical band gap β-In2S3-3xO3x thin films
    Barreau, N
    Bernède, JC
    Marsillac, S
    Mokrani, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 439 - 449
  • [2] Physico-chemical characterization of β-In2S3 thin films synthesized by solid-state reaction, induced by annealing, of the constituents sequentially deposited in thin layers
    Barreau, N
    Marsillac, S
    Bernède, JC
    [J]. VACUUM, 2000, 56 (02) : 101 - 106
  • [3] BARREAU N, 2001, P 17 EUR PHOT SOL EN, V1, P215
  • [4] Band offsets at the ZnSe/CuGaSe2(001) heterointerface
    Bauknecht, A
    Blieske, U
    Kampschulte, T
    Albert, J
    Sehnert, H
    Lux-Steiner, MC
    Klein, A
    Jaegermann, W
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1099 - 1101
  • [5] Band alignment at the interface of a SnO2/gamma-In2Se3 heterojunction
    Bernede, JC
    Marsillac, S
    [J]. MATERIALS RESEARCH BULLETIN, 1997, 32 (09) : 1193 - 1200
  • [6] LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF A CUGASE2/CUALSE2 HETEROSTRUCTURE
    CHICHIBU, S
    SUDO, R
    YOSHIDA, N
    HARADA, Y
    UCHIDA, M
    MATSUMOTO, S
    HIGUCHI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (3A): : L286 - L289
  • [7] Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO
  • [8] 2-G
  • [9] ROLES OF A SI INSERTION LAYER AT GAAS/ALAS HETEROINTERFACE DETERMINED BY X-RAY PHOTOEMISSION SPECTROSCOPY
    HASHIMOTO, Y
    TANAKA, G
    IKOMA, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (01): : 125 - 129
  • [10] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS
    KRAUT, EA
    GRANT, RW
    WALDROP, JR
    KOWALCZYK, SP
    [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1620 - 1623