Zeeman splittings of excitonic transitions at the Gamma point in wurtzite GaN: A magnetoreflectance investigation

被引：17

作者：

Campo, J

Julier, M

Coquillat, D

Lascaray, JP

Scalbert, D

Briot, O

机构：

[1] Groupe d’Etudes des Semiconducteurs, URA 357 CNRS, Université Montpellier II, 34095 Montpellier CEDEX 5, place Eugène Bataillon

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.56.R7108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Wurtzite GaN on (0001) sapphire is studied by means of reflectance and magnetocircular dichroism up to 5.5 T at 2 K. This very powerful technique allows us to determine the Zeeman splittings to be about 0.05 meV/T for the X-A and X-C excitons and almost zero for the X-B exciton. Reflectance and dichroism are interpreted with a model of Gaussian dispersion of the excitonic energies and are in excellent agreement with previously proposed band-edge models.

引用

页码：R7108 / R7111

页数：4

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