Investigations of pulse current electrodeposition for damascene copper metals

被引：13

作者：

Chang, SC

Shieh, JM ^{[1
]}

Dai, BT

Feng, MS

机构：

[1] Natl Nano Device Labs, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu 30050, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期

关键词：

All Open Access; Bronze;

D O I：

10.1116/1.1518974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of current density, duty cycle, and frequency of the applied pulse current on film qualities of electroplated copper was discussed. With various filled damascene structures, the corresponding filling power was optimized in a range of pulse current frequency. The optimized pulse current plating in conjunction with a leveler-free electrolyte resulted in a defect-free filling in approximate 100 nm damascenes and reduced the resistivity of Cu deposits. (C) 2002 American Vacuum Society.

引用

页码：2295 / 2298

页数：4