High temperature electrical properties of highly epitaxial CaCu3Ti4O12 thin films on (001) LaAlO3

被引:61
作者
Chen, L
Chen, CL [1 ]
Lin, Y
Chen, YB
Chen, XH
Bontchev, RP
Park, CY
Jacobson, AJ
机构
[1] Univ Houston, Texas Ctr Superconduct & Adv Mat, Houston, TX 77204 USA
[2] Univ Houston, Mat Res Sci & Engn Ctr, Houston, TX 77204 USA
[3] Univ Houston, Dept Chem, Houston, TX 77204 USA
[4] Univ Houston, Dept Phys, Houston, TX 77204 USA
关键词
D O I
10.1063/1.1565702
中图分类号
O59 [应用物理学];
学科分类号
摘要
The high temperature electrical behavior of highly epitaxial CaCu3Ti4O12 thin films on (001) LaAlO3 have been systematically investigated with traditional four-probe dc and ac resistance measurement techniques and two-probe ac impedance spectroscopy. Both ac and dc resistance measurements reveal that the Arrhenius plot, ln(sigma) vs (1/T), forms two linear sections with a transition temperature between them at 773 K, one with the activation energy E-a of similar to1.3 eV at low temperature, and the other with the activation energy E-b of similar to0.5 eV at high temperatures. The high temperature impedance spectra also confirm these phenomena and suggest that unlike in polycrystalline bulk material, the high frequency response is predominantly from grains rather than grain boundaries. (C) 2003 American Institute of Physics.
引用
收藏
页码:2317 / 2319
页数:3
相关论文
共 7 条
[1]   Optical response of high-dielectric-constant perovskite-related oxide [J].
Homes, CC ;
Vogt, T ;
Shapiro, SM ;
Wakimoto, S ;
Ramirez, AP .
SCIENCE, 2001, 293 (5530) :673-676
[2]  
Irvine J. T. S., 1990, Advanced Materials, V2, P132, DOI 10.1002/adma.19900020304
[3]  
JACOBSON AJ, UNPUB
[4]   Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition [J].
Lin, Y ;
Chen, YB ;
Garret, T ;
Liu, SW ;
Chen, CL ;
Chen, L ;
Bontchev, RP ;
Jacobson, A ;
Jiang, JC ;
Meletis, EI ;
Horwitz, J ;
Wu, HD .
APPLIED PHYSICS LETTERS, 2002, 81 (04) :631-633
[5]   Giant dielectric constant response in a copper-titanate [J].
Ramirez, AP ;
Subramanian, MA ;
Gardel, M ;
Blumberg, G ;
Li, D ;
Vogt, T ;
Shapiro, SM .
SOLID STATE COMMUNICATIONS, 2000, 115 (05) :217-220
[6]   CaCu3Ti4O12:: One-step internal barrier layer capacitor [J].
Sinclair, DC ;
Adams, TB ;
Morrison, FD ;
West, AR .
APPLIED PHYSICS LETTERS, 2002, 80 (12) :2153-2155
[7]   High dielectric constant in ACu3Ti4O12 and ACu3Ti3FeO12 phases [J].
Subramanian, MA ;
Li, D ;
Duan, N ;
Reisner, BA ;
Sleight, AW .
JOURNAL OF SOLID STATE CHEMISTRY, 2000, 151 (02) :323-325