Disorder and ferromagnetism in diluted magnetic semiconductors

被引:40
作者
Yang, SRE [1 ]
MacDonald, AH
机构
[1] Korea Univ, Dept Phys, Seoul 136701, South Korea
[2] Univ Texas, Dept Phys, Austin, TX 78712 USA
关键词
D O I
10.1103/PhysRevB.67.155202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the interplay between disorder and ferromagnetism in III1-xMnxV semiconductors. Our study is based on a model in which S = 5/2 Mn local moments are exchange coupled to valence-band holes that interact via Coulomb interactions with each other, with ionized Mn acceptors, and with the antisite defects present in these materials. We find quasiparticle participation ratios consistent with a metal-insulator transition that occurs in the ferromagnetic state near xsimilar to0.01. By evaluating the distribution of exchange mean fields at Mn moment sites, we provide evidence in favor of the applicability of impurity-band magnetic-polaron and hole-fluid models on insulating and metallic sides of the phase transition, respectively.
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页数:6
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