Reduced master equation analysis of multiple-tunnel junction single-electron memory device

被引:3
作者
Jalil, MBA
Wagner, M
机构
[1] Natl Univ Singapore, Dept Elect Engn, Singapore 119260, Singapore
[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England
关键词
D O I
10.1063/1.373749
中图分类号
O59 [应用物理学];
学科分类号
摘要
We employ a master equation (ME) approach in the charge transport analysis across a uniform multiple-tunnel junction (MTJ) memory trap, using a much-reduced state list derived from circuit symmetry, and previous assumptions by Jensen and Martinis. This enables all significant single tunneling and higher-order cotunneling sequences to be accounted for, while avoiding the computational cost of the full ME method. The reduced ME method is conceptually simpler and yields greater accuracy, compared with previous approximations based on tunneling probabilities. For an MTJ trap with zero stray capacitance C-0, the results obtained are found to agree very closely with the full ME results up to a temperature of T approximate to 3T(0)/10, where T-0 = e(2)/k(B)C, whereas previous methods break down at T approximate to T-0/10. Furthermore, unlike the earlier methods, the reduced ME approach can be applied to the realistic but less symmetric case of a trap with finite C-0, and remains valid up to the trap's maximum operating temperature of T approximate to T-0/100. Finally, our reduced ME results are in close agreement with available experimental data at T < T-0/200. (C) 2000 American Institute of Physics. [S0021-8979(00)03414-9].
引用
收藏
页码:869 / 877
页数:9
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