Design of sampled grating DBR lasers with integrated semiconductor optical amplifiers

被引：92

作者：

Mason, B ^{[1
]}

Barton, J

Fish, GA

Coldren, LA

DenBaars, SP

机构：

[1] Agil Commun Inc, Santa Barbara, CA 93111 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 07期

关键词：

distributed Bragg reflector lasers; indium phosphide; quantum well lasers; semiconductor optical amplifiers; tunable lasers; waveguide lasers;

D O I：

10.1109/68.853492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High output powers and wide range quasicontinuous tuning have been achieved in a sampled-grating distributed Bragg reflector laser with an integrated semiconductor-optical-amplifier. Using an amplifier with a curved passive output waveguide to suppress back reflection, we have achieved a quasicontinuous tuning range of over 50 nm and peak output powers greater than + 8 dBm, Optimizing the device structure and the sampled-grating mirror design has enabled tuning ranges of up to 72 nm in devices without amplifiers.

引用

页码：762 / 764

页数：3

共 6 条

[1] Sampled-grating DBR lasers with 101 wavelengths over 44nm and optimised power variation for WDM applications [J].