Very low contrast X-ray masks for high resolution printing

被引：2

作者：

Chen, Y ^{[1
]}

Simon, G ^{[1
]}

Haghiri-Gosnet, AM ^{[1
]}

Manin, L ^{[1
]}

Launois, H ^{[1
]}

机构：

[1] CNRS, Microstruct & Microelect Lab, F-92225 Bagneux, France

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00063-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a scheme for high resolution soft-contact printing with very low contrast X-ray masks. The scheme is based on the strongly enhanced image contrast due to absorber edge effects. In addition to a numerical analysis, we also investigate the mask fabrication with an absorber thickness of 0.15 mu m (W) and the replication with synchrotron radiation of ultra high density features.

引用

页码：275 / 278

页数：4

共 9 条

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