InGaAsSb photovoltaic cells with enhanced open-circuit voltage

被引:33
作者
Sulima, OV
Beckert, R
Bett, AW
Cox, JA
Mauk, MG
机构
[1] Freiburg Mat Res Ctr, D-79104 Freiburg, Germany
[2] Fraunhofer Inst Solar Energy Syst, D-79100 Freiburg, Germany
[3] AstroPower Inc, Newark, DE 19716 USA
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2000年 / 147卷 / 03期
关键词
D O I
10.1049/ip-opt:20000500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Various Zn diffusion profiles in InGaAsSb photovoltaic cells with diffused emitters were experimentally studied. It was determined that strong built-in electric fields near the surface lead to a reduction of the saturation value of the injection (J(01)) component of the dark current, and hence to the increase of the open-circuit voltage (V-oc). A value of J(01) as low as 4.2 x 10(-6) A/cm(2) and a value of V-oc as high as 344 mV at 3 A/cm(2) were measured.
引用
收藏
页码:199 / 204
页数:6
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