Silver induced faceting of Si(112)

Si nanowires grown in ultrahigh vacuum by metal-catalyzed vapor-liquid-solid epitaxy are known to exhibit sidewalls with {112}-type orientation. For some metals the sidewalls show pronounced faceting. Ag induced faceting on Si {112} surfaces was studied in situ by spot-profile-analyzing low energy electron diffraction and ex situ atomic force microscopy. The (112) surface decomposes into (115)- and (111)-(root 3 x root 3)-facets, both of which are Ag terminated. The width of the facets is kinetically limited and varies between 6 nm at T < 550 degrees C and 30 nm at T = 690 degrees C. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464555]