Fabrication of self-aligned side gates to carbon nanotubes

被引：14

作者：

Robinson, LAW

Lee, SB

Teo, KBK

Chhowalla, M

Amaratunga, GAJ

Milne, WI

Williams, DA

Hasko, DG

Ahmed, H

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[3] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

NANOTECHNOLOGY | 2003年 / 14卷 / 02期

关键词：

D O I：

10.1088/0957-4484/14/2/336

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have fabricated self-aligned, side-gated suspended multi-walled carbon nanotubes (MWCNTs), with nanotube-to-gate spacing of less than 10 nm. Evaporated metal forms an island on a suspended MWCNT, the island and the nanotube act as a mask shielding the substrate, and lift-off then removes the metal island, leaving a set of self-aligned side gates. Al, Cr, Au, and Ti were investigated and the best results were obtained with Cr, at a yield of over 90%.

引用

页码：290 / 293

页数：4

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