Field-effect transistor with deposited graphite thin film

被引：6

作者：

Inokawa, Hiroshi

Nagase, Masao

Hirono, Shigeru

Goto, Touichiro

Yamaguchi, Hiroshi

Torimitsu, Keiichi

机构：

[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan

[2] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[3] NTT Afty Engn Corp, Hachioji, Tokyo 1920918, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

graphite; field-effect transistor (FET); electron cyclotron resonance (ECR) sputtering;

D O I：

10.1143/JJAP.46.2615

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using a bottom-gate Lop-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing. On-off current ratios of 2 and 7 were attained at 294 and 150 K, respectively.

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收藏

页码：2615 / 2617

页数：3

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