Effect of UV light irradiation on SiC dry etch rates

被引：11

作者：

Leerungnawarat, P ^{[1
]}

Cho, H

Pearton, SJ

Zetterling, CM

Ostling, M

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] KTH, Dept Elect, Kista, Sweden

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 03期

关键词：

plasma etching; inductively coupled plasma; 4H-SiC; ultraviolet illumination; via holes;

D O I：

10.1007/s11664-000-0074-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF6/Ar and Cl-2/Ar chemistries. Etch rate enhancements up to a factor of 8 were observed with UV light irradiation during Cl-2/Ar etching. The enhancement mechanism is related to photodesorption of SiClx and CClx species. Surface morphologies were unchanged as a result of the UV enhancement with Cl-2/Ar discharges. By contrast, there was no effect of UV irradiation on the SiC etch rates in SF6/Ar plasmas, but the surfaces were typically smoother than those obtained without the ultraviolet illumination. In the SF6/Ar chemistry the rate-limiting steps are either Si-C bond-breaking or supply of fluorine radicals to the surface, and not desorption of the SiFx and CFx etch products.

引用

页码：342 / 346

页数：5

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