A new transport regime in the quantum Hall effect

被引：101

作者：

Shahar, D ^{[1
]}

Hilke, M

Li, CC

Tsui, DC

Sondhi, SL

Cunningham, JE

Razeghi, M

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[3] Lucent Technol, Holmdel, NJ 07733 USA

[4] Northwestern Univ, Dept Elect Engn, Evanston, IL 60208 USA

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 107卷 / 01期

关键词：

quantum Hall effect; electronic transport; quantum localization;

D O I：

10.1016/S0038-1098(98)00157-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study of the temperature evolution of the recently discovered reflection symmetry of the diagonal resistivity, rho(xx), near quantum Hall-to-insulator transitions, is presented. The data is found to follow a new phenomenological law over a broad range of temperatures, magnetic fields and samples. We note that this law is inconsistent with the scaling description of quantum Hall transitions and indicates the existence of a transport regime distinct from those considered previously. (C) 1998 Published by Elsevier Science Ltd.

引用

页码：19 / 23

页数：5

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