MAGNETIC-FIELD DEPENDENCE OF THE QUANTUM-HALL-LIQUID INSULATOR TRANSITION

被引:16
作者
ALPHENAAR, BW
WILLIAMS, DA
机构
[1] Hitachi Cambridge Laboratory, Cavendish Laboratory, Cambridge CB3 0HE, Madingley Road
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 08期
关键词
D O I
10.1103/PhysRevB.50.5795
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present measurements of the magnetic field dependence of the insulator transition in a gated AlxGa1-xAs/GaAs heterostructure. The resulting phase diagram shows reentrant behavior as the magnetic length decreases below the zero-field electron mean free path. By fitting our data to a predicted phase diagram, we obtain a value for the localization length exponent governing the quantum-Hall-liquid-insulator transition. As has been recently suggested, this value is in agreement with that determined for the critical exponent between quantum Hall plateaus.
引用
收藏
页码:5795 / 5798
页数:4
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