Growth of high quality, epitaxial InSb nanowires

被引：50

作者：

Park, Hyun D. ^{[1
]}

Prokes, S. M.

Twigg, M. E.

Ding, Yong

Wang, Zhong Lin

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 304卷 / 02期

关键词：

epitaxial; nanowires; narrow bandgap; InSb;

D O I：

10.1016/j.jcrysgro.2007.03.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of InSb nanowires on an Insb(111) substrate in a closed system is described. A high density InSb nanowires was grown by the use of InSb substrates in a torch sealed quartz tube at a temperature of 400 degrees C, using a 60 nm size gold colloid catalyst. The typical diameter of the InSb nanowires was 80-200 nm and they consisted of nearly equal atomic percent of In and Sb. Transmission electron microscopy showed the wires to be single crystal, with a growth direction of < 110 >. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：399 / 401

页数：3

共 15 条

[11] Fa-brication of InSb-core/alumina-sheath nanocables [J].