Redistribution dynamics of optically generated charges in In(Ga)As/GaAs self-assembled quantum dots

被引:5
作者
Ducommun, Y [1 ]
Kroutvar, M [1 ]
Reimer, M [1 ]
Bichler, M [1 ]
Schuh, D [1 ]
Abstreiter, G [1 ]
Finley, JJ [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
D O I
10.1063/1.1784040
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate a quantum-dot-based field-effect device allowing selective optical charging (electrons or holes) of a sub-ensemble of InGaAs/GaAs self-assembled quantum dots using resonant excitation. The dynamics of the photogenerated charge distribution is studied as a function of excitation energy and lattice temperature. Thermally activated redistribution of charge among the quantum dot ensemble is shown to occur, over a microsecond time scale, only at elevated (Tsimilar to100 K) temperatures. An activation energy analysis demonstrates that the two-dimensional wetting layer is the main charge redistribution channel and provides information about the single-particle energy structure of the quantum dots. (C) American Institute of Physics.
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页码:2592 / 2594
页数:3
相关论文
共 20 条
[1]   CONDITIONAL QUANTUM DYNAMICS AND LOGIC GATES [J].
BARENCO, A ;
DEUTSCH, D ;
EKERT, A ;
JOZSA, R .
PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4083-4086
[2]   Exciton dephasing in quantum dot molecules [J].
Borri, P ;
Langbein, W ;
Woggon, U ;
Schwab, M ;
Bayer, M ;
Fafard, S ;
Wasilewski, Z ;
Hawrylak, P .
PHYSICAL REVIEW LETTERS, 2003, 91 (26) :267401-267401
[3]   Ultralong dephasing time in InGaAs quantum dots [J].
Borri, P ;
Langbein, W ;
Schneider, S ;
Woggon, U ;
Sellin, RL ;
Ouyang, D ;
Bimberg, D .
PHYSICAL REVIEW LETTERS, 2001, 87 (15) :157401-157401
[4]   Coupled quantum dots as quantum gates [J].
Burkard, G ;
Loss, D ;
DiVincenzo, DP .
PHYSICAL REVIEW B, 1999, 59 (03) :2070-2078
[5]   Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [J].
Duarte, CA ;
da Silva, ECF ;
Quivy, AA ;
da Silva, MJ ;
Martini, S ;
Leite, JR ;
Meneses, EA ;
Lauretto, E .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :6279-6283
[6]   Quantum information processing using quantum dot spins and cavity QED [J].
Imamoglu, A ;
Awschalom, DD ;
Burkard, G ;
DiVincenzo, DP ;
Loss, D ;
Sherwin, M ;
Small, A .
PHYSICAL REVIEW LETTERS, 1999, 83 (20) :4204-4207
[7]   Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots [J].
Khaetskii, AV ;
Nazarov, YV .
PHYSICAL REVIEW B, 2001, 64 (12)
[8]   Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots [J].
Kroutvar, M ;
Ducommun, Y ;
Finley, JJ ;
Bichler, M ;
Abstreiter, G ;
Zrenner, A .
APPLIED PHYSICS LETTERS, 2003, 83 (03) :443-445
[9]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[10]   Quantum computation with quantum dots [J].
Loss, D ;
DiVincenzo, DP .
PHYSICAL REVIEW A, 1998, 57 (01) :120-126