Charge trapping and interface characteristics of thermally evaporated HfO2

被引：32

作者：

Chowdhury, NA ^{[1
]}

Garg, R ^{[1
]}

Misra, D ^{[1
]}

机构：

[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1805708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge trapping and interface characteristics of hafnium oxide (HfO2) films, grown by standard thermal evaporation, were investigated. High frequency capacitance-voltage and conductance measurements were carried out at various temperatures on aluminum gate metal-oxide-semiconductor capacitors, annealed at 450degreesC. A hysteresis below 30 mV was observed. Electrical data show, that charge trapping in HfO2 initially increases with decrease in temperature while it shows a turnaround phenomenon when the temperature is decreased further. Interface state density distribution observed at low temperatures suggests that charge-trapping behavior of these films is mostly due to shallow traps at the interface. (C) 2004 American Institute of Physics.

引用

页码：3289 / 3291

页数：3

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