Ferroelectricity of Bi2SrTa2O9 single crystals grown by the self-flux method

被引：12

作者：

Machida, A ^{[1
]}

Nagasawa, N ^{[1
]}

Ami, T ^{[1
]}

Suzuki, M ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 240, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 12A期

关键词：

ferroelectricity; single crystal; Bi layer-structured ferroelectric; self-flux method; domain motion; hysteresis loop; coercive field; optical anisotropy; electrical anisotropy;

D O I：

10.1143/JJAP.36.7267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric hysteresis of a Bi2SrTa2O9 single crystal, a promising candidate for ferroelectric random access memories (FeRAM), was observed at 200 degrees C. This single crystal, grown by the self-flux method, has a composition characterized as BixSryTa2O9 (x = 1.91 +/- 0.05, y = 1.27 +/- 0.08). Observing the optical anisotropy of the c-plane, it was found that this material has a Curie temperature (T-c) higher than 250 degrees C. Measuring the electrical properties on the c-axis and in the c-plane, it was confirmed that this material has electrical anisotropy. Furthermore; the domain motion of the crystal was observed under an electric field using a high-resolution charge-coupled-device (CCD) microscope system.

引用

页码：7267 / 7271

页数：5

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