Atom configuration study of delta-doped Er in InP by fluorescence EXAFS

被引:20
作者
Ofuchi, H
Tsuchiya, J
Matsubara, N
Tabuchi, M
Fujiwara, Y
Takeda, Y
机构
[1] Dept. of Mat. Sci. and Engineering, School of Engineering, Nagoya University, Furo-Cho, Chikusa-Ku
关键词
erbium; delta-doping; InP; OMVPE; EXAFS;
D O I
10.1016/S0169-4332(97)80182-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated OMVPE-grown InP delta-doped with Er by EXAFS. The EXAFS measurement revealed that Er atoms which were delta-doped in InP by exposing to Er source for 15 min at 530 degrees C (15 min Er-exposed sample) formed NaCl-structure ErP whose Er-P bond length was 2.80 +/- 0.03 Angstrom. The 10 min Er-exposed sample at 580 degrees C showed a spectrum similar to cubic bixbyite structure Er2O3 which was not observed in uniformly Er-doped InP samples. For the 40 min Er-exposed sample at 530 degrees C, Er atoms formed both ErP and Er2O3.
引用
收藏
页码:781 / 784
页数:4
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