DRASTIC EFFECTS OF HYDROGEN FLOW-RATE ON GROWTH-CHARACTERISTICS AND ELECTRICAL OPTICAL-PROPERTIES OF INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH TMIN AND TBP

被引：39

作者：

FUJIWARA, Y

FURUTA, S

MAKITA, K

ITO, Y

NONOGAKI, Y

TAKEDA, Y

机构：

[1] Department of Materials Science and Engineering, Nagoya University, Nagoya

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00568-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated effects of the hydrogen flow rate on growth characteristics and electrical/optical properties in InP grown by organometallic vapour phase epitaxy (OMVPE) using trimethylindium (TMIn) and tertiary-butylphosphine (TBP). The surface morphology was significantly improved with increasing hydrogen flow rate. Hall effect measurements indicated the decrease of residual impurities with hydrogen flow rate, being coincident with the photoluminescence (PL) results. These observations were discussed with reducing residence time and density of the source gases near the growth interface.

引用

页码：544 / 548

页数：5

共 10 条

[1] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J].