STRONG PHOTOLUMINESCENCE FROM AIP GAP DISORDERED SUPERLATTICE GROWN BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE

被引：28

作者：

WANG, XL

WAKAHARA, A

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.108556

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlP/GaP disordered superlattices (d-SLs)-are grown for the first time by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine as the phosphorous source. Strong photoluminescence (PL) is observed from the d-SL, comparing with the ordered superlattice (o-SL) and the bulk alloy (b-AL). The PL intensity of the d-SL is 158 times stronger than that of the o-SL and 114 times than that of the b-AL. The strong PL from the d-SL is attributed to the localized states created by the artificial disordering.

引用

页码：888 / 890

页数：3

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