Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

被引：26

作者：

Ishizuka, Shogo ^{[1
]}

Shibata, Hajime ^{[1
]}

Yamada, Akimasa ^{[1
]}

Fons, Paul ^{[1
]}

Sakurai, Keiichiro ^{[1
]}

Matsubara, Koji ^{[1
]}

Niki, Shigeru ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.2766669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu(In,Ga)Se-2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

引用

页数：3

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