PLASMA-CRACKED SUPPLY OF GROUP-V AND GROUP-VI ELEMENTS FOR LOW-TEMPERATURE EPITAXY

被引：5

作者：

HARIU, T

YAMAUCHI, S

FANG, SF

OHSHIMA, T

HAMADA, T

机构：

[1] Department of Electronic Engineering, Tohoku University, Sendai

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90401-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Plasma-cracking of group V (N, As, Sb) and group VI (Se) molecules into excited atoms has been confirmed by optical emission spectroscopy. The larger increase of density of group V elements than that of group III elements with increasing RF power can explain the shift of optimum V/III supply ratio for the epitaxial growth of III-V compounds. Plasma-cracking of nitrogen molecules in nitrogen-hydrogen mixed plasma through Penning effect is useful to grow better quality p-type ZnSe layers.

引用

页码：157 / 161

页数：5

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