RELATION BETWEEN GROWTH-CONDITIONS AND RECONSTRUCTION ON INAS DURING MOLECULAR-BEAM EPITAXY USING AN AS2 SOURCE

被引：17

作者：

HANCOCK, BR

KROEMER, H

机构：

来源：

关键词：

D O I：

10.1063/1.333025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4239 / 4243

页数：5

共 10 条

[1] Carlson R. W., 1979, METHODS EXPT PHYSICS, V14, P6
[2] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES
DRATHEN, P
RANKE, W
JACOBI, K
[J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166
[3] FOLBERTH O, UNPUB
[4] GOLDFINGER P, 1959, ADV MASS SPECTROM, P534
[5] THEORY OF POLAR SEMICONDUCTOR SURFACES
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1492 - 1496
[6] THIN INAS EPITAXIAL LAYERS GROWN ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM DEPOSITION
MEGGITT, BT
PARKER, EHC
KING, RM
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 528 - 530
[7] DIE THERMODYNAMISCHEN DATEN UND DAMPFDRUCKE DER WICHTIGSTEN III-V-VERBINDUNGEN
RENNER, T
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 39 - 45
[8] NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION
SCHAFFER, WJ
LIND, MD
KOWALCZYK, SP
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 688 - 695
[9] SCHAFFER WJ, 1981, 3RD ANN MOL BEAM EP
[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS
YANO, M
NOGAMI, M
MATSUSHIMA, Y
KIMATA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) : 2131 - 2137