MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS

被引：49

作者：

YANO, M ^{[1
]}

NOGAMI, M ^{[1
]}

MATSUSHIMA, Y ^{[1
]}

KIMATA, M ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,DEPT ELECT ENGN,TOKYO 160,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1143/JJAP.16.2131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2131 / 2137

页数：7

共 12 条

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION
ARTHUR, JR
LEPORE, JJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 545 - &
[2] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE
BALIGA, BJ
GHANDHI, SK
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687
[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[4] MOLECULAR BEAM EPITAXY AND OPTICAL EVALUATION OF A1XGA1-XAS
CHO, AY
STOKOWSK, SE
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (09) : 565 - &
[5] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES
CRONIN, GR
CONRAD, RW
BORELLO, SR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) : 1336 - &
[6] EPITAXIAL INDIUM ARSENIDE BY VACUUM EVAPORATION
GODINHO, N
BRUNNSCH.A
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (01) : 47 - &
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
MATSUSHIMA, Y
HIROFUJI, Y
GONDA, S
MUKAI, S
KIMATA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) : 2321 - 2325
[8] MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX
MATSUSHIMA, Y
GONDA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (11) : 2093 - 2101
[9] PREPARATION AND PROPERTIES OF EPITAXIAL INAS
MCCARTHY, JP
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 649 - &
[10] GAAS, GAP, AND GAAS1-XPX FILMS DEPOSITED BY MOLECULAR-BEAM EPITAXY
NAGANUMA, M
TAKAHASHI, K
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (01): : 187 - 200

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